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AP4955GM Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement D2 D2 D1 D1 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G2 S2 S1 G1 -20V 45m -5.6A Low Gate Charge Fast Switching Characteristic ID Description TThe Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -20 20 -5.6 -4.5 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 200303041 AP4955GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -20 -0.5 - Typ. -0.01 Max. Units 45 65 -1.2 -1 -25 100 30 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A VGS=-2.5V, ID=-4A 9 19 3 6 9 10 52 24 270 230 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C) o VDS=VGS, ID=-250uA VDS=-5V, ID=-5A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS=20V ID=-5A VDS=-16V VGS=-4.5V VDS=-10V ID=-1A RG=3.3,VGS=-10V RD=10 VGS=0V VDS=-20V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1400 2240 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=-1.6A, VGS=0V IS=-5A, VGS=0V, dI/dt=100A/s Min. - Typ. 32 22 Max. Units -1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 /W when mounted on min. copper pad. AP4955GM 70 60 60 T A = 25 o C -5.0V 50 T A = 150 o C -ID , Drain Current (A) -5.0V -4.5V -ID , Drain Current (A) -4.5V 50 40 40 30 30 -3.0V -2.5V -3.0V 20 20 -2.5V 10 10 V G =- 2.0 V 0 0 1 2 3 4 5 6 7 8 9 0 V G =- 2.0 V 0 1 2 3 4 5 6 7 8 9 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 55 1.6 50 I D = -4 A T A =25 C Normalized R DS(ON) o 1.4 I D =-5A V G =-10V RDS(ON) (m ) 45 1.2 40 1.0 35 0.8 30 2 3 4 5 6 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 5 4 1.5 -IS(A) T j =150 o C 2 T j =25 o C -VGS(th) (V) 3 1.0 0.5 1 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4955GM f=1.0MHz 14 10000 -VGS , Gate to Source Voltage (V) 12 I D =-5A V DS =-16V 10 C (pF) 8 C iss 1000 6 4 2 C oss C rss 0 0 10 20 30 40 50 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 10 1ms 0.1 0.1 0.05 -ID (A) 10ms 1 0.02 0.01 100ms 1s 0.1 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135 C/W o T A =25 o C Single Pulse DC 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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